Recently, the 2026 HoFCVD Thin-Film Equipment & Application Technology Conference & the 12th Global Hot-Wire CVD Conference was grandly held in Jiujiang, Jiangxi. At this conference, Professor Hideki Matsumura, the "Father of Hot-Wire CVD," along with top scholars and industry leaders from over 20 countries gathered to decode the latest breakthroughs and industrialization pathways of hot-wire CVD technology. Dr. Long Wei, Director of the Cell Development Department at Tongwei Co., Ltd.'s Photovoltaic Technology Center, was invited to attend and deliver a keynote speech.

Conference Venue

During the conference, Dr. Long Wei, Director of the Cell Development Department at Tongwei's Photovoltaic Technology Center, delivered a keynote speech titled "Roadmap for Low-Indium Silver-Free Heterojunction PV Modules and Potential Applications of HWCVD." He pointed out that for HJT technology to establish long-term advantages amid fierce market competition, it must achieve the dual goal of "matching or surpassing XBC technology in module efficiency while aligning manufacturing costs with third-generation TOPCon." Under this strategic guidance, developing high-efficiency HJT modules with power exceeding 780W has become an inevitable choice. Tongwei has formulated a detailed technology development blueprint accordingly.

Focusing on the core challenge of HJT cost reduction, Tongwei has achieved two major breakthroughs in key materials. On the "silver reduction" pathway, by applying low-silver-content pastes, full-aperture steel plate printing, and photon-enhanced curing technology, silver consumption has been significantly reduced. Simultaneously, Tongwei is tackling disruptive "silver-free" technologies such as seedless-layer electroplated copper and contactless chain horizontal electroplating, paving the way to eliminate dependence on precious metals. On the "indium reduction" pathway, through the development of new transparent conductive materials and optimized preparation processes, indium usage has been significantly reduced while largely maintaining cell efficiency. Combined with material recycling technology, Tongwei is committed to reducing indium consumption by over 90% before 2028. The parallel advancement and substantive breakthroughs of these two technology routes have laid a solid foundation for HJT modules to achieve highly competitive costs and supply chain security.

Dr. Long Wei, Director of the Cell Development Department at Tongwei's Photovoltaic Technology Center, delivering a keynote speech

Dr. Long Wei also highlighted the innovative application prospects of Hot-Wire Chemical Vapor Deposition (HWCVD) technology in the HJT field. Experiments have shown that thin films prepared via HWCVD can be used to replace part of the front-side TCO while improving cell efficiency. In addition, the technology has demonstrated significant effectiveness in repairing cell edge defects caused by laser cutting, offering a new option for HJT multi-busbar and module technology upgrades.

With a forward-looking full-industry-chain R&D system, Tongwei has comprehensively deployed mainstream cell and module technologies including TOPCon, HJT, BC, and perovskite/crystalline silicon tandem. On June 3, tested by the internationally authoritative TÜV Rheinland, the Tongwei THC-G12 heterojunction copper-interconnect module achieved an output power of 802.43W under the standard module size of 2384×1303mm, with a full-area conversion efficiency of 25.83%. This marks the twelfth time this series of modules has set a new industry power record since its launch, leading the HJT industrialization process into a new stage. Furthermore, the completion and outdoor validation of the world's first fully automated 5MW perovskite/silicon tandem cell pilot line mark a key step for Tongwei on the industrialization path of next-generation photovoltaic technology.

Through this technical sharing and exchange, Tongwei's innovative leadership and industrial insight in cutting-edge photovoltaic technology were powerfully demonstrated. Going forward, Tongwei will continue to drive industrial upgrading through technological innovation, contributing to the global energy transition.